Reactive Ion Beam Etching and Overgrowth Process for Fabrication of InGaN Inner Stripe Laser Diodes

Shin-ya Nunoue; Masahiro Yamamoto; Mariko Suzuki; Chiharu Nozaki; Joji Nishio; Lisa Sugiura; Masaaki Onomura; Kazuhiko Itaya; Masayuki Ishikawa

doi:https://doi.org/10.7567/SSDM.1997.C-6-8

[C-6-8] Reactive Ion Beam Etching and Overgrowth Process for Fabrication of InGaN Inner Stripe Laser Diodes

Shin-ya Nunoue、Masahiro Yamamoto、Mariko Suzuki、Chiharu Nozaki、Joji Nishio、Lisa Sugiura、Masaaki Onomura、Kazuhiko Itaya、Masayuki Ishikawa (1.Advanced Semiconductor Devices Research Laboratories, R&D Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1997.C-6-8

1997 International Conference on Solid State Devices and Materials

[C-6-8] Reactive Ion Beam Etching and Overgrowth Process for Fabrication of InGaN Inner Stripe Laser Diodes