Location Control of Large Grain Following Excimer-Laser Melting of Si Thin-Films

Ryoichi Ishihara

doi:https://doi.org/10.7567/SSDM.1997.C-8-3

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜 1997年9月19日
ACT CITY Hamamatsu, Hamamatsu, Japan

[C-8-3] Location Control of Large Grain Following Excimer-Laser Melting of Si Thin-Films

Ryoichi Ishihara (1.Laboratory of Electronic Components and Materials (ECTM) Delft Institute of Microelectronics and Submicrontechnology (DIMES), Delft University of Technology)

https://doi.org/10.7567/SSDM.1997.C-8-3

▲