Development of the High Aspect-Ratio Y-Shaped Gate Process for HEMT

Ryoji Shigemasa; Yoshiki Nitta; Tomoyuki Ohshima; Masanori Tsunotani; Tamotsu Kimura

doi:https://doi.org/10.7567/SSDM.1997.D-10-2

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜 1997年9月19日
ACT CITY Hamamatsu, Hamamatsu, Japan

[D-10-2] Development of the High Aspect-Ratio Y-Shaped Gate Process for HEMT

Ryoji Shigemasa、Yoshiki Nitta、Tomoyuki Ohshima、Masanori Tsunotani、Tamotsu Kimura (1.Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.)

https://doi.org/10.7567/SSDM.1997.D-10-2

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