[D-10-6] Extremely Low Noise 0.15 μm T-Gate AlGaAs/InGaAs Pseudomorphic HEMTs

Hyung-Sup Yoon、Jin-Hee Lee、Hyung-Sun Park、Hyun-Tae Choi、Chul-Soon Park、Kwang-Eui Pyun (1.Compound Semiconductor Research Department, Semiconductor Technology Division, Electronics and Telecommunications Research Institute)

https://doi.org/10.7567/SSDM.1997.D-10-6