[D-11-2] Cl2 Influence on Si1-xGex Base Epitaxial Layer Growth for High Speed Bipolar Transistor

T. Aoyama、T. Tatsumi、S. Saito (1.ULSI Device Development Laboratories, NEC Corporation、2.Microelectronics Research Laboratories, NEC Corporation)

https://doi.org/10.7567/SSDM.1997.D-11-2