[D-12-2] Surface Segregation Behaviors of B, Ga, and Sb during Si-MBE: Calculation Using a First-Principle Method

Jiro Ushio、Kiyokazu Nakagawa、Masanobu Miyao、Takuya Maruizumi (1.Central Research Laboratory, Hitachi, Ltd.)

https://doi.org/10.7567/SSDM.1997.D-12-2