Surface Segregation Behaviors of B, Ga, and Sb during Si-MBE: Calculation Using a First-Principle Method

1997 International Conference on Solid State Devices and Materials

Sep 16, 1997 - Sep 19, 1997
ACT CITY Hamamatsu, Hamamatsu, Japan

Jiro Ushio, Kiyokazu Nakagawa, Masanobu Miyao, Takuya Maruizumi (1.Central Research Laboratory, Hitachi, Ltd.)