Defect-Controlled Selective Epitaxial Growth of GaP on Si by Migration-Enhanced Epitaxy under Atomic Hydrogen Irradiation

Takuto Tsuji; Hiroo Yonezu; Mikihiro Yokozeki; Yasufumi Takagi; Naoki Ohshima

doi:https://doi.org/10.7567/SSDM.1997.D-2-1

[D-2-1] Defect-Controlled Selective Epitaxial Growth of GaP on Si by Migration-Enhanced Epitaxy under Atomic Hydrogen Irradiation

Takuto Tsuji、Hiroo Yonezu、Mikihiro Yokozeki、Yasufumi Takagi、Naoki Ohshima (1.Department of Electrical and Electronic Engineering, Toyohashi University of Technology)

https://doi.org/10.7567/SSDM.1997.D-2-1

1997 International Conference on Solid State Devices and Materials

[D-2-1] Defect-Controlled Selective Epitaxial Growth of GaP on Si by Migration-Enhanced Epitaxy under Atomic Hydrogen Irradiation