[D-5-4] Γ-X Tunneling in GaAs/AlAs/GaAs Heterostructure

Yu. N. Khanin、E. E. Vdovin、K. S. Novoselov、Yu. V. Dubrovskii、T. G. Andersson、P. Omling、S.-B. Carlson (1.Institute of Microelectronics Technology and High Purity Material Russian Academy of Sciences、2.Department of Physics, Chalmers University of Technology、3.Lund University)

https://doi.org/10.7567/SSDM.1997.D-5-4