[D-8-1] Boron Diffusion in Nitrided Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs

Takayuki Aoyama, Satoshi Ohkubo, Hiroko Tashiro, Yoko Tada, Kunihiro Suzuki, Kei Horiuchi (1.Fujitsu Laboratories Ltd.)

https://doi.org/10.7567/SSDM.1997.D-8-1