[D-8-1] Boron Diffusion in Nitrided Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs

Takayuki Aoyama、Satoshi Ohkubo、Hiroko Tashiro、Yoko Tada、Kunihiro Suzuki、Kei Horiuchi (1.Fujitsu Laboratories Ltd.)

https://doi.org/10.7567/SSDM.1997.D-8-1