[D-9-3] Input Power Dependence of Large-Signal Microwave Characteristics of Resonant-Tunneling High Electron Mobility Transistors
Hiroyuki Fukuyama, Koichi Maezawa, Masafumi Yamamoto, Hiroshi Okazaki, Masahiro Muraguchi
(1.NTT System Electronics Laboratories, 2.NTT Wireless Systems Laboratories)
https://doi.org/10.7567/SSDM.1997.D-9-3
