The Japan Society of Applied Physics

[D-9-3] Input Power Dependence of Large-Signal Microwave Characteristics of Resonant-Tunneling High Electron Mobility Transistors

Hiroyuki Fukuyama, Koichi Maezawa, Masafumi Yamamoto, Hiroshi Okazaki, Masahiro Muraguchi (1.NTT System Electronics Laboratories, 2.NTT Wireless Systems Laboratories)

https://doi.org/10.7567/SSDM.1997.D-9-3