Input Power Dependence of Large-Signal Microwave Characteristics of Resonant-Tunneling High Electron Mobility Transistors

Hiroyuki Fukuyama; Koichi Maezawa; Masafumi Yamamoto; Hiroshi Okazaki; Masahiro Muraguchi

doi:https://doi.org/10.7567/SSDM.1997.D-9-3

[D-9-3] Input Power Dependence of Large-Signal Microwave Characteristics of Resonant-Tunneling High Electron Mobility Transistors

Hiroyuki Fukuyama、Koichi Maezawa、Masafumi Yamamoto、Hiroshi Okazaki、Masahiro Muraguchi (1.NTT System Electronics Laboratories、2.NTT Wireless Systems Laboratories)

https://doi.org/10.7567/SSDM.1997.D-9-3

1997 International Conference on Solid State Devices and Materials

[D-9-3] Input Power Dependence of Large-Signal Microwave Characteristics of Resonant-Tunneling High Electron Mobility Transistors