[A-4-2] Differences between the Electrical Properties of Nitrided Si-SiO2 Interfaces Formed by (a) Post-Oxidation, Remote Plasma-Assisted Nitridation and (b) Remote Plasma-Assisted Deposition

Hiro NIIMI、Gerald LUCOVSKY、Yider WU (1.Departments of Materials Science and Engineering, North Carolina State University、2.Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University、3.Departments of Electrical and Computer Engineering, North Carolina State University)

https://doi.org/10.7567/SSDM.1998.A-4-2