[A-8-2] A Manufacturable HDP Oxide Filled STI Process with SiN Liner for the Deep Sub-Micron Inter-Well Isolation

H. S. Lee、S. J. Kim、T. Park、J. H. Choi、K. W. Park、B. K. Hwang、Y. G. Shin、 H. K. Kang. Z. Li、Y. Lee、F. Moghadam. (1.Semiconductor R&D Center, Samsung Electronics Co., Ltd.、2.Applied Materials, Inc.)

https://doi.org/10.7567/SSDM.1998.A-8-2