A Manufacturable HDP Oxide Filled STI Process with SiN Liner for the Deep Sub-Micron Inter-Well Isolation

H. S. Lee; S. J. Kim; T. Park; J. H. Choi; K. W. Park; B. K. Hwang; Y. G. Shin; H. K. Kang. Z. Li; Y. Lee; F. Moghadam.

doi:https://doi.org/10.7567/SSDM.1998.A-8-2

1998 International Conference on Solid State Devices and Materials

Sep 7, 1998 - Sep 10, 1998
International Conference Center Hiroshima, Hiroshima, Japan

[A-8-2] A Manufacturable HDP Oxide Filled STI Process with SiN Liner for the Deep Sub-Micron Inter-Well Isolation

H. S. Lee, S. J. Kim, T. Park, J. H. Choi, K. W. Park, B. K. Hwang, Y. G. Shin, H. K. Kang. Z. Li, Y. Lee, F. Moghadam. (1.Semiconductor R&D Center, Samsung Electronics Co., Ltd., 2.Applied Materials, Inc.)

https://doi.org/10.7567/SSDM.1998.A-8-2

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