Facet-Free Si Selective Epitaxial Growth Adaptable to Elevated Source/Drain MOSFETs with Narrow STI

Kiyotaka MIYANO; Ichiro MIZUSHIMA; Kazuya OHUCHI; Akira HOKAZONO; Yoshitaka TSUNASHIMA

doi:https://doi.org/10.7567/SSDM.1998.A-9-3

1998 International Conference on Solid State Devices and Materials

Sep 7, 1998 - Sep 10, 1998
International Conference Center Hiroshima, Hiroshima, Japan

[A-9-3] Facet-Free Si Selective Epitaxial Growth Adaptable to Elevated Source/Drain MOSFETs with Narrow STI

Kiyotaka MIYANO, Ichiro MIZUSHIMA, Kazuya OHUCHI, Akira HOKAZONO, Yoshitaka TSUNASHIMA (1.Process Eng. Lab., Device Eng. Lab., Microelectronics Eng. Lab., Toshiba corporation)

https://doi.org/10.7567/SSDM.1998.A-9-3

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