[B-3-4] High-Performance EEPROMs Using N- and P-Channel Poly-Si TFTs with ECR N20-Plasma Oxide

Nae-In Lee、Jin-Woo Lee、Hyoung-Sub Kim、Chul-Hi Han (1.Department of Electrical Engineering, KAIST、2.Semiconductor R & D Center, Samsung Electronics Co. Ltd.)

https://doi.org/10.7567/SSDM.1998.B-3-4