[B-4-2] Surface Preparation, Growth, and Interface Control of Ultrathin Gate Oxides

Yasushiro Nishioka、Kenji Namba、Mieko Matsumura、Tomoyuki Sakoda、Yoshinao Kumagai、Tadahiro Komeda、Hikaru Kobayashi、Tyuji Hoshino、Atsushi Ando、Kazushi Miki (1.Texas Instruments Tsukuba Research and Development Center Limited、2.The Institute of Scientific & Industrial Researches, Osaka University、3.Faculty of Pharmaceutical Sciences, Chiba University、4.Electrotechnical Laboratory (ETL))

https://doi.org/10.7567/SSDM.1998.B-4-2