[B-5-3] Improved Ti SALICIDE Technology Using High Dose Ge Pre-Amorphization for 0.10um CMOS and Beyond

K. Ohuchi, K. Miyashita, A. Murakoshi, H. Yoshimura, K. Suguro, Y. Toyoshima (1.ULSI Device Eng. Lab., Microelectronics Eng. Lab., Toshiba Corporation, 2.ULSI Process Eng. Lab., Microelectronics Eng. Lab., Toshiba Corporation)

https://doi.org/10.7567/SSDM.1998.B-5-3