Improved Ti SALICIDE Technology Using High Dose Ge Pre-Amorphization for 0.10um CMOS and Beyond

K. Ohuchi; K. Miyashita; A. Murakoshi; H. Yoshimura; K. Suguro; Y. Toyoshima

doi:https://doi.org/10.7567/SSDM.1998.B-5-3

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜 1998年9月10日
International Conference Center Hiroshima, Hiroshima, Japan

[B-5-3] Improved Ti SALICIDE Technology Using High Dose Ge Pre-Amorphization for 0.10um CMOS and Beyond

K. Ohuchi、K. Miyashita、A. Murakoshi、H. Yoshimura、K. Suguro、Y. Toyoshima (1.ULSI Device Eng. Lab., Microelectronics Eng. Lab., Toshiba Corporation、2.ULSI Process Eng. Lab., Microelectronics Eng. Lab., Toshiba Corporation)

https://doi.org/10.7567/SSDM.1998.B-5-3

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