[B-5-4] Improvement of Ultra-Thin 3.3nm Thick Oxide for Co-Salicide Process Using NF3 Annealed Poly-Si Gate

T. Y. Chang、T. F. Lei、T. S. Chao、H. C. Lin、T. Y. Huang、S. K. Chen、A. Tuan、S. Chou (1.Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University、2.National Nano Device Laboratory, Air Products Asia、3.San Fu Co Ltd.)

https://doi.org/10.7567/SSDM.1998.B-5-4