[B-6-3] Extremely Low Si Etching (＜1nm) during Hydrogen Annealing of Silicon-on-Insulator Nobuhiko SATO、Masataka. ITO、Jun NAKAYAMA、Takao YONEHARA (1.ELTRAN project, Canon Inc.) https://doi.org/10.7567/SSDM.1998.B-6-3
