[B-7-4] High Performance Accumulated Back-Interface Dynamic Threshold SOI MOS-FET's (AB-DTMOS) with Large Body Effect at Low Supply Voltage
Makoto Takamiya、Takuya Saraya、Tran Ngoc Duyet、Yuri Yasuda、Toshiro Hiramoto
(1.Institute of Industrial Science, University of Tokyo、2.Faculty of Science and Engineering, Chuo University、3.VLSI Design and Education Center, University of Tokyo)
https://doi.org/10.7567/SSDM.1998.B-7-4