Fabrication of 40-150nm Gate Length Ultrathin n-MOSFETs Using ELTRAN SOI Wafers

Eiichi Suzuki; Kenichi Ishii; Seigo Kanemaru; Tatsuro Maeda; Toshiyuki Tsutsumi; Kiyoko Nagai; Toshihiro Sekigawa; Hiroshi Hiroshima

doi:https://doi.org/10.7567/SSDM.1998.B-8-4

1998 International Conference on Solid State Devices and Materials

Sep 7, 1998 - Sep 10, 1998
International Conference Center Hiroshima, Hiroshima, Japan

[B-8-4] Fabrication of 40-150nm Gate Length Ultrathin n-MOSFETs Using ELTRAN SOI Wafers

Eiichi Suzuki, Kenichi Ishii, Seigo Kanemaru, Tatsuro Maeda, Toshiyuki Tsutsumi, Kiyoko Nagai, Toshihiro Sekigawa, Hiroshi Hiroshima (1.Electrotechnical Laboratory)

https://doi.org/10.7567/SSDM.1998.B-8-4

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