Fabrication of 40-150nm Gate Length Ultrathin n-MOSFETs Using ELTRAN SOI Wafers

Eiichi Suzuki; Kenichi Ishii; Seigo Kanemaru; Tatsuro Maeda; Toshiyuki Tsutsumi; Kiyoko Nagai; Toshihiro Sekigawa; Hiroshi Hiroshima

doi:https://doi.org/10.7567/SSDM.1998.B-8-4

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜 1998年9月10日
International Conference Center Hiroshima, Hiroshima, Japan

[B-8-4] Fabrication of 40-150nm Gate Length Ultrathin n-MOSFETs Using ELTRAN SOI Wafers

Eiichi Suzuki、Kenichi Ishii、Seigo Kanemaru、Tatsuro Maeda、Toshiyuki Tsutsumi、Kiyoko Nagai、Toshihiro Sekigawa、Hiroshi Hiroshima (1.Electrotechnical Laboratory)

https://doi.org/10.7567/SSDM.1998.B-8-4

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