Effect of Process Temperature on SiC MOS Properties

X. W. Wang; Xin Guo; T. P. Ma G. J. Cui; T. Tamagawa; B. Halpern; Y. Takahashi

doi:https://doi.org/10.7567/SSDM.1998.C-10-4

1998 International Conference on Solid State Devices and Materials

Sep 7, 1998 - Sep 10, 1998
International Conference Center Hiroshima, Hiroshima, Japan

[C-10-4] Effect of Process Temperature on SiC MOS Properties

X. W. Wang, Xin Guo, T. P. Ma G. J. Cui, T. Tamagawa, B. Halpern, Y. Takahashi (1.Department of Electrical Engineering, Yale University, 2.Jet Process Corporation, 3.Department of Electronics Engineering, Nihon University)

https://doi.org/10.7567/SSDM.1998.C-10-4

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