The Japan Society of Applied Physics

[C-10-4] Effect of Process Temperature on SiC MOS Properties

X. W. Wang、Xin Guo、 T. P. Ma G. J. Cui、T. Tamagawa、B. Halpern、Y. Takahashi (1.Department of Electrical Engineering, Yale University、2.Jet Process Corporation、3.Department of Electronics Engineering, Nihon University)

https://doi.org/10.7567/SSDM.1998.C-10-4