Highly Improved Electrical Properties of Diamond MISFET Prepared by Ultrahigh-Vacuum Process

Young Yun; Tetsuro Maki; Hiroyuki Tanaka; Takeshi Kobayashi

doi:https://doi.org/10.7567/SSDM.1998.C-10-5

1998 International Conference on Solid State Devices and Materials

Sep 7, 1998 - Sep 10, 1998
International Conference Center Hiroshima, Hiroshima, Japan

[C-10-5] Highly Improved Electrical Properties of Diamond MISFET Prepared by Ultrahigh-Vacuum Process

Young Yun, Tetsuro Maki, Hiroyuki Tanaka, Takeshi Kobayashi (1.Department of Electrical Engineering, Faculty of Engineering Science, Osaka University)

https://doi.org/10.7567/SSDM.1998.C-10-5

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