Silicon Nano-Crystal Memory with Tunneling Nitride

Ilgweon Kim; Hyungsik Kim; Jongho Lee; Hyungcheol Shin

doi:https://doi.org/10.7567/SSDM.1998.C-3-2

1998 International Conference on Solid State Devices and Materials

Sep 7, 1998 - Sep 10, 1998
International Conference Center Hiroshima, Hiroshima, Japan

[C-3-2] Silicon Nano-Crystal Memory with Tunneling Nitride

Ilgweon Kim, Hyungsik Kim, Jongho Lee, Hyungcheol Shin (1.Department of Electrical Engineering, KAIST, 2.LG Semicon Co., Ltd, 3.School of Electrical Engineering, Wonkwang University)

https://doi.org/10.7567/SSDM.1998.C-3-2

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