Silicon Nano-Crystal Memory with Tunneling Nitride

Ilgweon Kim; Hyungsik Kim; Jongho Lee; Hyungcheol Shin

doi:https://doi.org/10.7567/SSDM.1998.C-3-2

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜 1998年9月10日
International Conference Center Hiroshima, Hiroshima, Japan

[C-3-2] Silicon Nano-Crystal Memory with Tunneling Nitride

Ilgweon Kim、Hyungsik Kim、Jongho Lee、Hyungcheol Shin (1.Department of Electrical Engineering, KAIST、2.LG Semicon Co., Ltd、3.School of Electrical Engineering, Wonkwang University)

https://doi.org/10.7567/SSDM.1998.C-3-2

▲