[C-3-3] Characteristics of Narrow Channel MOSFET Memory Based on Silicon Nanocrystals

Yi Shi、Kenichi Saito、Hiroki Ishikuro、Toshiro Hiramoto (1.Institute of Industrial Science, University of Tokyo、2.VLSI Design and Education Center, University of Tokyo、3.Department of Physics & Institute of Solid State Physics, Nanjing University)

https://doi.org/10.7567/SSDM.1998.C-3-3