[C-3-4] Single Electron Charging to a Si Quantum Dot Floating Gate in MOS Structures

A. KOHNO、H. MURAKAMI、M. IKEDA、H. NISHIYAMA、S. MIYAZAKI、M. HIROSE (1.Department of Electrical Engineering, Hiroshima University)

https://doi.org/10.7567/SSDM.1998.C-3-4