[C-3-4] Single Electron Charging to a Si Quantum Dot Floating Gate in MOS Structures

A. KOHNO, H. MURAKAMI, M. IKEDA, H. NISHIYAMA, S. MIYAZAKI, M. HIROSE (1.Department of Electrical Engineering, Hiroshima University)

https://doi.org/10.7567/SSDM.1998.C-3-4