[C-3-5] A Si Memory Device Composed of a 1D-Wire MOSFET Switch and a Single-Electron-Transistor Detector

Y. Takahashi, A. Fujiwara, K. Yamazaki, H. Namatsu, K. Kurihara, K. Murase (1.NTT Basic Research Laboratories)

https://doi.org/10.7567/SSDM.1998.C-3-5