[C-3-5] A Si Memory Device Composed of a 1D-Wire MOSFET Switch and a Single-Electron-Transistor Detector

Y. Takahashi、A. Fujiwara、K. Yamazaki、H. Namatsu、K. Kurihara、K. Murase (1.NTT Basic Research Laboratories)

https://doi.org/10.7567/SSDM.1998.C-3-5