[C-3-8] Effects of Electron Tunneling into a Single-Crystalline Si Layer through an Ultrathin Buried Oxide

Yasuhiko Ishikawa、Shigenori Makita、Jianhua Zhang、Toshiaki Tsuchiya、Michiharu Tabe (1.Research Institute of Electronics, Shizuoka University、2.Shimane University)

https://doi.org/10.7567/SSDM.1998.C-3-8