[D-1-3] RF Noise Study of Small Gate Width Si-MOSFETs up to 8GHz Application for Low Power Consumption

E. Morifuji、C. E. Biber、W. Bachtold、T. Ohguro、T. Yoshitomi、H. Kimijima、T. Morimoto、H. S. Momose、Y. Katsumata、H. Iwai (1.Toshiba Corporation、2.Swiss Federal Institute of Technology (ETH))

https://doi.org/10.7567/SSDM.1998.D-1-3