The Japan Society of Applied Physics

[D-1-3] RF Noise Study of Small Gate Width Si-MOSFETs up to 8GHz Application for Low Power Consumption

E. Morifuji, C. E. Biber, W. Bachtold, T. Ohguro, T. Yoshitomi, H. Kimijima, T. Morimoto, H. S. Momose, Y. Katsumata, H. Iwai (1.Toshiba Corporation, 2.Swiss Federal Institute of Technology (ETH))

https://doi.org/10.7567/SSDM.1998.D-1-3