[D-2-4] Oxide Thickness Dependence of Hot Carrier Stress Induced Drain Leakage Current Degradation in Thin-Oxide n-MOSFET's

Tahui Wang、N. K. Zous、L. Y. Huang、C. K. Yeh、T. S. Chao (1.Department of Electronics Engineering, National Chiao-Tung University、2.National Nano Devices Lab.)

https://doi.org/10.7567/SSDM.1998.D-2-4