[D-3-3] A Fatigue-Tolerant MFOS Structure with Large Memory Window of 3.6V Using Sr-Deficient and Bi-Excess SBTO Ferroelectric Film Prepared on SiO2/Si at Low Temperature by PLD Method

M. Noda、H. Sugiyama、Y. Matsumuro、M. Okuyama (1.Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University)

https://doi.org/10.7567/SSDM.1998.D-3-3