[D-3-3] A Fatigue-Tolerant MFOS Structure with Large Memory Window of 3.6V Using Sr-Deficient and Bi-Excess SBTO Ferroelectric Film Prepared on SiO2/Si at Low Temperature by PLD Method

M. Noda, H. Sugiyama, Y. Matsumuro, M. Okuyama (1.Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University)

https://doi.org/10.7567/SSDM.1998.D-3-3