[D-3-6] Properties of Ferroelectric Memory FET Using Sr2(Ta, Nb)2O7 Thin Film

Yoshikazu Fujimori、Naoki Izumi、Takashi Nakamura、Akira Kamisawa (1.Process Technology Div., ULSI Research and Development Headquarters, ROHM CO., LTD.)

https://doi.org/10.7567/SSDM.1998.D-3-6