Annealing Behavior of Low-Temperature-Deposited SrTiO3 Capacitor

Mitsuru Nishitsuji; Kaoru Inoue; Akiyoshi Tamura; Tsuyoshi Tanaka; Daisuke Ueda

doi:https://doi.org/10.7567/SSDM.1998.D-7-5

1998 International Conference on Solid State Devices and Materials

Sep 7, 1998 - Sep 10, 1998
International Conference Center Hiroshima, Hiroshima, Japan

[D-7-5] Annealing Behavior of Low-Temperature-Deposited SrTiO3 Capacitor

Mitsuru Nishitsuji, Kaoru Inoue, Akiyoshi Tamura, Tsuyoshi Tanaka, Daisuke Ueda (1.Electronics Research Laboratory, Matsushita Electronics Corporation)

https://doi.org/10.7567/SSDM.1998.D-7-5

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