From Strain-Compensated In0.80Ga0.20As/InAlAs to InAs/InAlAs HEMT&apos;s

I. J. Hsieh; C. C. Liao; C. Tsai; Albert Chin

doi:https://doi.org/10.7567/SSDM.1998.D-7-6

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜 1998年9月10日
International Conference Center Hiroshima, Hiroshima, Japan

[D-7-6] From Strain-Compensated In0.80Ga0.20As/InAlAs to InAs/InAlAs HEMT's

I. J. Hsieh、C. C. Liao、C. Tsai、Albert Chin (1.Inst. of Electronics Eng., National Chiao Tung Univ.、2.Dept. of Electrical Engineering, Chung Hua Univ.)

https://doi.org/10.7567/SSDM.1998.D-7-6

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