Improvement of SiO2/4H-SiC Interface by Using High Temperature Hydrogen Annealing at 1000℃

Kenji Fukuda; Kiyoko Nagai; Toshihiro Sekigawa; Sadafumi Yoshida; Kazuo Arai; Masahito Yoshikawa

doi:https://doi.org/10.7567/SSDM.1998.LA-3

[LA-3] Improvement of SiO2/4H-SiC Interface by Using High Temperature Hydrogen Annealing at 1000℃

Kenji Fukuda, Kiyoko Nagai, Toshihiro Sekigawa, Sadafumi Yoshida, Kazuo Arai, Masahito Yoshikawa (1.New Energy and Industrial Technology Development Organization, Electrotechnical Laboratory, 2.Japan Atomic Energy Research Institute)

https://doi.org/10.7567/SSDM.1998.LA-3

1998 International Conference on Solid State Devices and Materials

[LA-3] Improvement of SiO2/4H-SiC Interface by Using High Temperature Hydrogen Annealing at 1000℃