[LA-3] Improvement of SiO2/4H-SiC Interface by Using High Temperature Hydrogen Annealing at 1000℃

Kenji Fukuda、Kiyoko Nagai、Toshihiro Sekigawa、Sadafumi Yoshida、Kazuo Arai、Masahito Yoshikawa (1.New Energy and Industrial Technology Development Organization, Electrotechnical Laboratory、2.Japan Atomic Energy Research Institute)

https://doi.org/10.7567/SSDM.1998.LA-3