[LB-3] Doped Channel HFET with Effective Lateral Energy Modulation for High Power Enhancement Operation

Makoto Inai、Hidehiko Sasaki、Takahiro Katamata、Hiroyuki Seto、Fujio Okui、Susumu Fukuda (1.RF Semiconductor Products Dept., Circuit Products Division, Murata Mfg. Co. Ltd.)

https://doi.org/10.7567/SSDM.1998.LB-3