[A-12-1] MOS Characteristics of NH3-Nitrided N2O-Annealed Oxides Fabricated at Reduced Pressure

Giwan Yoon, Yefim Epstein (1.Digital Semiconductor, Hudson, 2.School of Engineering, Information & Communications University (ICU), 3.Intel Massachusetts)

https://doi.org/10.7567/SSDM.1999.A-12-1